microsemi corp. reserves the right to make changes without further notice. to verify the current version please check our web site at www. microsemi.com or contact our factory direct. microsemi corp. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 /869-2324 general description the 1214-110M is an internally matched, common base transistor capable of providing 110 watts of pulsed rf output power at 330 s pulse width, 10% duty factor across the band 1200 to 1400 mhz. this hermetically solder-sealed transistor is specifically designed for l-band radar applications. it utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness. case outline 55kt, style 1 absolute maximum ratings maximum power dissipation @ 25 o c 270 watts maximum voltage and current bvces collector to emitter voltage 75 volts bvebo emitter to base voltage 3.0 volts ic collector current 8 amps maximum temperatures storage temperature - 65 to + 200 o c operating junction temperature + 200 o c electrical characteristics @ 25 o c symbol characteristics test conditions min typ max units pout pg c rl droop flatness vswr 1 vswrs power out power gain collector efficiency input return loss droop flatness load mismatch tolerance load mismatch - stability freq = 1200 ? 1400 mhz vcc = 50 volts pin = 20 watts pulse width = 330 s duty factor = 10% 110 7.4 50 10 55 170 0.5 1.25 3:1 1.5:1 watts db % db db db functional characteristics @ 25 c bvces ices jc 1 collector to emitter breakdown collector to emitter leakage thermal resistance ic = 100 ma vce = 50 volts rated pulse condition 75 10 0.65 volts ma o c/w 1214-110M 110 watts - 50 volts, 330 s, 10% radar 1200 - 1400 mhz
microsemi corp. reserves the right to make changes without further notice. to verify the current version please check our web site at www. microsemi.com or contact our factory direct. microsemi corp. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 /869-2324 performance curves 1214-110M pin vs. pout 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30 35 pin (w) pout (w) 1200 mhz 1300 mhz 1400 mhz 1214-110M pin vs. efficency 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 0 5 10 15 20 25 30 35 pin (w) efficency (%) 1200 mhz 1300 mhz 1400 mhz 1214-110M pin vs. gain 0.0 2.0 4.0 6.0 8.0 10.0 12.0 0 5 10 15 20 25 30 35 pin (w) gain (db) 1200 mhz 1300 mhz 1400 mhz impedance information frequencies (mhz) ) ( ? source z ) ( ? load z 2 1200 3.36-j3.12 4.97+j0.15 1300 3.5-j2.4 5.33-j2.86 1400 3.81-j1.3 2.88-j3.86 note 2: load z exclusive of bias circuit 1214-110M
microsemi corp. reserves the right to make changes without further notice. to verify the current version please check our web site at www. microsemi.com or contact our factory direct. microsemi corp. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 /869-2324 test circuit 1214-110M
microsemi corp. reserves the right to make changes without further notice. to verify the current version please check our web site at www. microsemi.com or contact our factory direct. microsemi corp. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 /869-2324 1214-110M
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